Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments

摘要

In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects, effects at the p-n junction detector level. The effects due to irradiating particles (pions, protons, neutrons), to their flux, to the anisotropy of the threshold energy in silicon, to the impurity concentrations and resistivity of the starting material are investigated as time, fluence and temperature dependences of detector characteristics. The expected degradation of the electrical parameters of detectors in the complex hadron background fields at LHC & SLHC are predicted.